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hexfet ? power mosfet fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. 02/13/12 v dss =20v r ds(on) = 0.135 IRF7501PBF description parameter max. units v ds drain-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 2.4 i d @ t a = 70c continuous drain current, v gs @ 10v 1.9 a i dm pulsed drain current 19 p d @t a = 25c maximum power dissipation 1.25 w p d @t a = 70c maximum power dissipation 0.8 w linear derating factor 0.01 w/c v gsm gate-to-source voltage single pulse tp<10 s16v v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt 5.0 v/ns tj , tstg operating junction and storage temperature range -55 to + 150 c soldering temperature, for 10 seconds 240 (1.6mm from case) absolute maximum ratings parameter max. units r ja maximum junction-to-ambient 100 c/w thermal resistance micro8 d1 d1 d 2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 generation v technology ulrtra low on-resistance dual n-channel mosfet very small soic package low profile (<1.1mm) available in tape & reel fast switching lead-free all micro8 data sheets reflect improved thermal resistance, power and current -handling ratings- effective only for product marked with date code 505 or later . pd - 95345a www.irf.com 1
IRF7501PBF 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 1.7a, v gs = 0v t rr reverse recovery time ??? 39 59 ns t j = 25c, i f = 1.7a q rr reverse recovery charge ??? 37 56 nc di/dt = 100a/ s source-drain ratings and characteristics ??? ??? ??? ??? 19 1.25 a s d g surface mounted on fr-4 board, t 10sec repetitive rating; pulse width limited by max. junction temperature. ( see fig. 10 ) i sd 1.7a, di/dt 66a/ s, v dd v (br)dss , t j 150c notes: pulse width 300 s; duty cycle 2% parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.041 ??? v/c reference to 25c, i d = 1ma ??? 0.085 0.135 v gs = 4.5v, i d = 1.7a ??? 0.120 0.20 v gs = 2.7v, i d = 0.85a v gs(th) gate threshold voltage 0.70 ??? ??? v v ds = v gs , i d = 250 a g fs forward transconductance 2.6 ??? ??? s v ds = 10v, i d = 0.85a ??? ??? 1.0 v ds = 16v, v gs = 0v ??? ??? 25 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 12v gate-to-source reverse leakage ??? ??? -100 v gs = -12v q g total gate charge ??? 5.3 8.0 i d = 1.7a q gs gate-to-source charge ??? 0.84 1.3 nc v ds = 16v q gd gate-to-drain ("miller") charge ??? 2.2 3.3 v gs = 4.5v, see fig. 9 t d(on) turn-on delay time ??? 5.7 ??? v dd = 10v t r rise time ??? 24 ??? i d = 1.7a t d(off) turn-off delay time ??? 15 ??? r g = 6.0 t f fall time ??? 16 ??? r d = 5.7 c iss input capacitance ??? 260 ??? v gs = 0v c oss output capacitance ??? 130 ??? pf v ds = 15v c rss reverse transfer capacitance ??? 61 ??? ? = 1.0mhz, see fig. 8 electrical characteristics @ t j = 25c (unless otherwise specified) i gss a r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns
IRF7501PBF www.irf.com 3 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds 20 s pulse width t = 25c a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v j 0.01 0.1 1 10 100 0.1 1 10 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v 20 s pulse width t = 150c j 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20 s pulse width ds fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a
IRF7501PBF 4 www.irf.com fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate ( ) fig 5. normalized on-resistance vs. temperature 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = 4.5v gs i = 1.7a d 0.0 0.2 0.4 0.6 0.8 0246 a i , drain current (a) d v = 2.5v gs v = 5.0v gs 0.05 0.07 0.09 0.11 0.13 2345678 a r , drain-to-source on resistance ds(on) ( gs v , gate-to-source voltage (v) i = 2.4a d

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IRF7501PBF www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical gate charge vs. gate-to-source voltage 0 100 200 300 400 500 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 9 i = 1.7a v = 16v d ds 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRF7501PBF 6 www.irf.com v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 12a. switching time test circuit fig 12b. switching time waveforms fig 11a. basic gate charge waveform q g q gs q gd v g charge fig 11b. gate charge test circuit d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
IRF7501PBF www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? !! ?
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IRF7501PBF 8 www.irf.com micro8 part marking information micro8 package outline dimensions are shown in milimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x lot code (xx) e x amp l e : t h i s i s an i r f 7 501 part number p = de s i gnat e s l e ad - f r e e product (optional) w = we e k y = year dat e code (y w) - s ee tabl e bel ow ww = (1-26) if preceded by last digit of calendar year year y wor k week w 9 2009 5 2005 2003 2002 2001 2004 3 2 1 4 2007 2006 2008 7 6 8 2010 0 03 02 01 04 c b a d 26 24 25 z x y b 2002 b 28 ww = (27-52) if preceded by a let t er year 2001 y a week wor k 27 w a k 2010 f 2006 2004 2003 2005 d c e 2008 2007 2009 h g j x 50 30 29 d c 51 52 y z

IRF7501PBF www.irf.com 9 micro8 tape & reel information dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site.

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